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afv09p350--04nr3 afv09p350--04gnr3 1 rf device data freescale semiconductor, inc. rf power ldmos transistors n--channel enhancement--mode lateral mosfets these 100 w symmetrical doherty rf power ldmos transistors are designed for cellular base station applications covering the frequency range of 720 to 960 mhz. ? typical doherty single--carrier w--cdma performance: v dd =48vdc, i dqa = 860 ma, v gsb =0.9vdc,p out = 100 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) 920 mhz 19.5 48.5 7.2 ?29.2 940 mhz 19.5 49.5 7.1 ?32.0 960 mhz 19.2 48.0 7.0 ?35.7 features ? production tested in a symmetrical doherty configuration ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? in tape and reel. r3 suffix = 250 units, 32 mm tape width, 13--inch reel. document number: afv09p350--04n rev. 0, 1/2014 freescale semiconductor technical data 720?960 mhz, 100 w avg., 48 v airfast rf power ldmos transistors afv09p350--04nr3 afv09p350--04gnr3 (top view) rf outa /v dsa 31 figure 1. pin connections 42 rf outb /v dsb rf ina /v gsa rf inb /v gsb note: exposed backside of the package is the source terminal for the transistors. om--780--4l plastic afv09p350--04nr3 om--780g--4l plastic afv09p350--04gnr3 carrier peaking ? freescale semiconductor, inc., 2014. a ll rights reserved.
2 rf device data freescale semiconductor, inc. afv09p350--04nr3 afv09p350--04gnr3 table 1. maximum ratings rating symbol value unit drain--source voltage v dss ?0.5, +105 vdc gate--source voltage v gs ?6.0, +10 vdc operating voltage v dd 55, +0 vdc storage temperature range t stg ?65 to +150 ? c case operating temperature range t c ?40 to +150 ? c operating junction temperature range (1,2) t j ?40 to +225 ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 86 ? c, 102 w w--cdma, 48 vdc, i dqa = 860 ma, v gsb = 0.9 vdc, 940 mhz r ? jc 0.45 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 1c machine model (per eia/jesd22--a115) a charge device model (per jesd22--c101) iv table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 ? c table 5. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics (4) zero gate voltage drain leakage current (v ds = 105 vdc, v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =48vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics (4) gate threshold voltage (v ds =10vdc,i d = 460 ? adc) v gs(th) 1.3 1.8 2.3 vdc gate quiescent voltage (v dd =48vdc,i da = 860 madc, measured in functional test) v gs(q) 2.0 2.5 3.0 vdc drain--source on--voltage (v gs =10vdc,i d =1.3adc) v ds(on) 0.1 0.21 0.3 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/ application notes -- an1955. 4. each side of device measured separately. (continued)
afv09p350--04nr3 afv09p350--04gnr3 3 rf device data freescale semiconductor, inc. table 5. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic unit max typ min symbol functional tests (1,2,3) (in freescale doherty test fixture, 50 ohm system) v dd =48vdc,i dqa = 860 ma, v gsb =0.9vdc, p out = 100 w avg., f = 920 mhz, single--carrier w--cdma, iq magnit ude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 18.5 19.5 21.5 db drain efficiency ? d 45.0 48.5 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 6.6 7.2 ? db adjacent channel power ratio acpr ? ?29.2 ?27.0 dbc load mismatch (in freescale test fixture, 50 ohm system) i dqa = 860 ma, v gsb =0.9vdc,f=940mhz vswr 10:1 at 52 vdc, 500 w pulsed output power (3 db input overdrive from 200 w pulsed rated power) no device degradation typical performances (2) (in freescale doherty test fixture, 50 ohm system) v dd =48vdc,i dqa = 860 ma, v gsb = 0.9 vdc, 920--960 mhz bandwidth p out @ 1 db compression point, cw p1db ? 200 ? w p out @ 3 db compression point (4) p3db ? 500 ? w am/pm (maximum value measured at the p3db compression point across the 920--960 mhz frequency range) ? ? ?21 ? ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 43 ? mhz gain flatness in 40 mhz bandwidth @ p out = 100 w avg. g f ? 0.3 ? db gain variation over temperature (--30 ? cto+85 ? c) ? g ? 0.01 ? db/ ? c output power variation over temperature (--30 ? cto+85 ? c) ? p1db ? 0.0075 ? db/ ? c 1. part internally input matched. 2. measurement made with device in a sy mmetrical doherty configuration. 3. measurement made with device in str aight lead configuration before any lead forming operation is applied. 4. p3db = p avg + 7.0 db where p avg is the average output power measured using an uncli pped w--cdma single--carrier input signal where output par is compressed to 7.0 db @ 0.01% probability on ccdf.
4 rf device data freescale semiconductor, inc. afv09p350--04nr3 afv09p350--04gnr3 figure 2. afv09p350--04nr3 test circuit component layout -- -- afv09p350--4n rev. 0 cut out area c5 d47369 v gga v dda v ggb v ddb c4 r1 c3 c1 c2 c6 c7 c8 z1 r2 c9 c10 c25 r3 c22 c23 c24 c16 c18 c19 c27 c20 c21 c17 c13 c11 c12 c26 c14 c15 c p table 6. afv09p350--04nr3 test circuit component designations and values part description part number manufacturer c1, c6, c13, c20 3 3pf chip capacitors atc100b330jt500xt atc c2, c7, c17, c21 4.3 pf chip capacitors atc100b4r3ct500xt atc c3, c8 6.8 pf chip capacitors atc100b6r8ct500xt atc c4, c9. c14, c22 47 pf chip capacitors atc100b470jt500xt atc c5, c10 2.2 ? f chip capacitors c3225x7r1h225k250ab tdk c11, c18 12 pf chip capacitors atc100b120jt500xt atc c12, c19 8.2 pf chip capacitors atc100b8r2ct500xt atc c15, c23 10 ? f chip capacitors c5750x7s2a106m230kb tdk c16, c24 220 ? f, 100 v electrolytic capacitors mcgpr100v227m16x26-rh multicomp c25 0.5 pf chip capacitor atc100b0r5bt500xt atc c26 0.3 pf chip capacitor atc100b0r3bt500xt atc c27 0.8 pf chip capacitor atc100b0r8bt500xt atc r1, r2 1.5 ? , 1/4 w chip resistors rc1206fr-071r5l yageo r3 50 ? , 30 w termination rfp-375375n6z50-2 anaren z1 800--1000 mhz band, 90 ? , 3 db hybrid coupler x3c09p1-03s anaren pcb rogers ro4350b, 0.020 ? , ? r =3.66 d47369 mtl
afv09p350--04nr3 afv09p350--04gnr3 5 rf device data freescale semiconductor, inc. typical characteristics parc (db) -- 6 -- 2 -- 3 -- 4 -- 5 -- 7 820 acpr f, frequency (mhz) figure 3. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 100 watts avg. 10 20 19 18 -- 3 6 60 50 40 30 -- 2 1 -- 2 4 -- 2 7 -- 3 0 ? d , drain efficiency (%) ? d g ps , power gain (db) 17 16 15 14 13 12 11 840 860 880 900 920 940 960 980 20 -- 3 3 acpr (dbc) parc figure 4. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 6 5 -- 1 5 -- 2 5 -- 3 5 -- 5 5 1 100 imd, intermodulatio n distortion (dbc) -- 4 5 im5--u im5--l im7--l im7--u figure 5. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) -- 1 -- 3 50 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 30 70 90 130 0 60 50 40 30 20 10 ? d ? drain efficiency (%) ? 3 db = 108.7 w 110 ? d acpr parc acpr (dbc) -- 4 5 -- 1 5 -- 2 0 -- 2 5 -- 3 5 -- 3 0 -- 4 0 22 g ps , power gain (db) 20 18 16 14 12 10 g ps ? 1db=41.4w ? 2db=78w -- 5 g ps im3--l 1 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0. 01% probab ility on ccdf v dd =48vdc,p out = 100 w (avg.) i dqa = 860 ma, v gsb =0.9vdc single--carrier w--cdma 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% probabilit y on ccdf v dd =48vdc,p out = 136 w (pep), i dqa = 860 ma v gsb = 0.9 vdc, two--tone measurements (f1 + f2)/2 = center frequency of 940 mhz im3--u v dd =48vdc,i dqa = 860 ma, v gsb =0.9vdc f = 940 mhz, single--carrier w--cdma
6 rf device data freescale semiconductor, inc. afv09p350--04nr3 afv09p350--04gnr3 typical characteristics 1 g ps acpr p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 2 0 -- 3 0 12 24 0 60 50 40 30 20 ? d , drain efficiency (%) ? d g ps , power gain (db) 22 20 10 100 300 10 -- 7 0 acpr (dbc) 18 16 14 -- 1 0 -- 4 0 -- 5 0 -- 6 0 figure 7. broadband frequency response 8 20 f, frequency (mhz) v dd =48vdc p in =0dbm i dqa = 860 ma, v gsb =0.9vdc 16 14 12 gain (db) 18 10 650 700 750 800 850 900 950 1000 1050 gain 920 mhz 940 mhz 960 mhz 920 mhz 940 mhz 960 mhz 960 mhz v dd =48vdc,i dqa = 860 ma v gsb = 0.9 vdc, single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% probabilit y on ccdf
afv09p350--04nr3 afv09p350--04gnr3 7 rf device data freescale semiconductor, inc. table 7. carrier side load pull performance ? maximum power tuning v dd =48vdc,i dq = 862 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 920 2.39 ? j3.65 2.32 + j3.41 1.84 + j0.12 21.3 54.1 260 59.9 ?14 940 2.54 ? j4.03 2.49 + j3.84 1.85 + j0.11 21.3 54.1 258 59.9 ?14 960 2.90 ? j4.64 2.76 + j4.31 1.77 + j0.13 21.2 54.1 259 59.8 ?15 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 920 2.39 ? j3.65 2.29 + j3.66 2.11 ? j0.03 19.1 54.8 301 61.1 ?19 940 2.54 ? j4.03 2.45 + j4.12 2.04 ? j0.03 19.2 54.8 299 60.8 ?18 960 2.90 ? j4.64 2.74 + j4.63 1.97 ? j0.01 19.1 54.8 300 60.6 ?19 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 8. carrier side load pull performance ? maximum drain efficiency tuning v dd =48vdc,i dq = 862 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 920 2.39 ? j3.65 2.11 + j3.81 1.51 + j1.85 24.3 51.5 140 71.8 ?20 940 2.54 ? j4.03 2.27 + j4.24 1.43 + j1.84 24.3 51.4 138 71.9 ?21 960 2.90 ? j4.64 2.60 + j4.68 1.46 + j1.61 23.8 52.2 164 71.6 ?20 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 920 2.39 ? j3.65 2.22 + j3.95 1.92 + j1.53 21.5 53.2 207 71.6 ?25 940 2.54 ? j4.03 2.38 + j4.45 1.74 + j1.57 21.7 52.9 197 71.8 ?27 960 2.90 ? j4.64 2.66 + j4.94 1.59 + j1.48 21.5 53.1 206 72.0 ?27 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
8 rf device data freescale semiconductor, inc. afv09p350--04nr3 afv09p350--04gnr3 table 9. peaking side load pull performance ? maximum power tuning v dd =48vdc,v gsb =0.9vdc , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 920 2.39 ? j3.65 2.33 + j3.43 1.52 + j0.07 16.8 54.7 294 66.5 ?25 940 2.54 ? j4.03 2.44 + j3.87 1.44 + j0.21 16.9 54.6 291 66.9 ?25 960 2.90 ? j4.64 2.64 + j4.34 1.58 + j0.24 17.0 54.5 283 66.5 ?25 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 920 2.39 ? j3.65 2.28 + j3.69 1.68 ? j0.06 14.7 55.3 335 66.8 ?29 940 2.54 ? j4.03 2.40 + j4.15 1.60 + j0.13 14.9 55.2 332 68.0 ?30 960 2.90 ? j4.64 2.61 + j4.66 1.71 + j0.14 14.9 55.1 325 66.8 ?30 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 10. peaking side load pull performance ? maximum drain efficiency tuning v dd =48vdc,v gsb = 0.9 vdc, pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 920 2.39 ? j3.65 2.22 + j3.39 1.81 + j1.79 17.5 52.4 174 78.9 ?29 940 2.54 ? j4.03 2.27 + j3.80 1.35 + j2.23 17.6 51.2 131 81.4 ?35 960 2.90 ? j4.64 2.43 + j4.27 1.24 + j2.22 17.6 51.2 131 81.6 ?36 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 920 2.39 ? j3.65 2.20 + j3.66 2.07 + j1.45 15.5 53.6 231 77.1 ?33 940 2.54 ? j4.03 2.31 + j4.12 1.86 + j1.49 15.7 53.6 231 78.9 ?36 960 2.90 ? j4.64 2.50 + j4.62 1.70 + j1.64 15.8 53.4 218 78.7 ?37 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
afv09p350--04nr3 afv09p350--04gnr3 9 rf device data freescale semiconductor, inc. p1db -- typical carrier side load pull contours ? 940 mhz -- 1 3 2.5 imaginary ( ? ) 22.5 13.5 1 1.5 0.5 0 3 2 1.5 -- 0 . 5 -- 1 3 2.5 imaginary ( ? ) 22.5 13.5 1 1.5 0.5 0 3 2 1.5 -- 0 . 5 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 8. p1db load pull output power contours (dbm) real ( ? ) -- 1 3 2.5 imaginary ( ? ) 22.5 13.5 1 1.5 figure 9. p1db load pull efficiency contours (%) real ( ? ) figure 10. p1db load pull gain contours (db) real ( ? ) figure 11. p1db load pull am/pm contours ( ? ) real ( ? ) 0.5 0 3 2 1.5 -- 0 . 5 -- 1 3 2.5 imaginary ( ? ) 22.5 13.5 1 1.5 0.5 0 3 2 1.5 -- 0 . 5 51.5 51 p e 52 52.5 53 52.5 53 53.5 54 50.5 50 p e 60 56 62 58 64 66 68 70 p e 21.5 21 22 22.5 23 23.5 24 24.5 25 p e -- 2 4 -- 2 2 -- 2 0 -- 1 8 -- 1 6 -- 1 4 -- 1 2 -- 1 0 56 58
10 rf device data freescale semiconductor, inc. afv09p350--04nr3 afv09p350--04gnr3 p3db -- typical carrier side load pull contours ? 940 mhz -- 1 3 2.5 imaginary ( ? ) 22.5 13.5 1 1.5 0.5 0 3 2 1.5 -- 0 . 5 -- 1 3 2.5 imaginary ( ? ) 22.5 13.5 1 1.5 0.5 0 3 2 1.5 -- 0 . 5 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 12. p3db load pull output power contours (dbm) real ( ? ) -- 1 3 2.5 imaginary ( ? ) 22.5 13.5 1 1.5 figure 13. p3db load pull efficiency contours (%) real ( ? ) figure 14. p3db load pull gain contours (db) real ( ? ) figure 15. p3db load pull am/pm contours ( ? ) real ( ? ) 0.5 0 3 2 1.5 -- 0 . 5 -- 1 3 2.5 imaginary ( ? ) 22.5 13.5 1 1.5 0.5 0 3 2 1.5 -- 0 . 5 51.5 51 p e 52 53.5 54 54.5 52.5 53 53.5 60 58 56 62 p e 64 66 68 70 19.5 20 19 18.5 p e 20.5 21 21.5 22 22.5 p e -- 2 6 -- 2 4 -- 2 0 -- 1 8 -- 1 6 -- 2 2 -- 2 8 -- 3 0 56 58 60
afv09p350--04nr3 afv09p350--04gnr3 11 rf device data freescale semiconductor, inc. p1db -- typical peaking side load pull contours ? 940 mhz -- 1 3 2.5 imaginary ( ? ) 22.5 0.5 3.5 1 1.5 0.5 0 3 2 1.5 -- 0 . 5 1 -- 1 3 2.5 imaginary ( ? ) 22.5 0.5 3.5 1 1.5 0.5 0 3 2 1.5 -- 0 . 5 1 -- 1 3 2.5 imaginary ( ? ) 22.5 0.5 3.5 1 1.5 0.5 0 3 2 1.5 -- 0 . 5 1 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 16. p1db load pull output power contours (dbm) real ( ? ) -- 1 3 2.5 imaginary ( ? ) 22.5 0.5 3.5 1 1.5 figure 17. p1db load pull efficiency contours (%) real ( ? ) figure 18. p1db load pull gain contours (db) real ( ? ) figure 19. p1db load pull am/pm contours ( ? ) real ( ? ) 0.5 0 3 2 1.5 -- 0 . 5 1 p e 53 52.5 54 53.5 54.5 52 51.5 51 50.5 p e 70 68 66 72 74 76 78 80 p e 17.5 18 17 15.5 16 14.5 15 16.5 18.5 p e -- 2 2 -- 2 0 -- 2 4 -- 2 6 -- 2 8 -- 3 0 -- 3 2 -- 3 4 -- 3 6 16.5 -- 2 4
12 rf device data freescale semiconductor, inc. afv09p350--04nr3 afv09p350--04gnr3 p3db -- typical peaking side load pull contours ? 940 mhz -- 1 3 2.5 imaginary ( ? ) 22.5 0.5 3.5 1 1.5 0.5 0 3 2 1.5 -- 0 . 5 1 -- 1 3 2.5 imaginary ( ? ) 22.5 0.5 3.5 1 1.5 0.5 0 3 2 1.5 -- 0 . 5 1 -- 1 3 2.5 imaginary ( ? ) 22.5 0.5 3.5 1 1.5 0.5 0 3 2 1.5 -- 0 . 5 1 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 20. p3db load pull output power contours (dbm) real ( ? ) -- 1 3 2.5 imaginary ( ? ) 22.5 0.5 3.5 1 1.5 figure 21. p3db load pull efficiency contours (%) real ( ? ) figure 22. p3db load pull gain contours (db) real ( ? ) figure 23. p3db load pull am/pm contours ( ? ) real ( ? ) 0.5 0 3 2 1.5 -- 0 . 5 1 51.5 52 p e 53 52.5 51 53.5 54 54.5 55 62 p e 64 66 68 70 72 74 76 15.5 16 15 14.5 14 13.5 13 12.5 12 p e -- 2 6 p e -- 2 8 -- 3 0 -- 3 2 -- 3 4 -- 3 6 -- 3 8 -- 4 0 -- 4 2 78
afv09p350--04nr3 afv09p350--04gnr3 13 rf device data freescale semiconductor, inc. package dimensions
14 rf device data freescale semiconductor, inc. afv09p350--04nr3 afv09p350--04gnr3
afv09p350--04nr3 afv09p350--04gnr3 15 rf device data freescale semiconductor, inc.
16 rf device data freescale semiconductor, inc. afv09p350--04nr3 afv09p350--04gnr3
afv09p350--04nr3 afv09p350--04gnr3 17 rf device data freescale semiconductor, inc.
18 rf device data freescale semiconductor, inc. afv09p350--04nr3 afv09p350--04gnr3
afv09p350--04nr3 afv09p350--04gnr3 19 rf device data freescale semiconductor, inc. product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 jan. 2014 ? initial release of data sheet
20 rf device data freescale semiconductor, inc. afv09p350--04nr3 afv09p350--04gnr3 information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or u se of any product or circu it, and specifically disclaims any and all li ability, including wit hout limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2014 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: afv09p350--04n rev. 0, 1/2014

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